| PART |
Description |
Maker |
| LC382161T-17 |
2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
|
Sanyo Semicon Device
|
| IS42S16100C1-6T IS42S16100C1-6TL |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solu...
|
| IS42S32800B-6BL IS42S32800B-6BI |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
|
http://
|
| IS42S16100-5BL IS42S16100-5TL IS42S16100-6BL IS42S |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS45S16100C1-7TA1 IS45S16100C1-7TLA1 IS45S16100C1- |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
| IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42 |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
|
| IS42S32800B-6B IS42S32800B-6BLI IS42S32800B-6T IS4 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| TC59LM814CFT-60 TC59LM806CFT-50 TC59LM806CFT-55 TC |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
|
TOSHIBA[Toshiba Semiconductor]
|
| EBD11ED8ABFB-6B EBD11ED8ABFB-7B EBD11ED8ABFB-7A |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words ?72 bits, 2 Banks)
|
Elpida Memory
|
| W9812G2GH-6I |
a high-speed synchronous dynamic random access memory (SDRAM), organized as 1,048,576 words ??4 banks ??32 bits
|
WINBOND ELECTRONICS CORP
|
| TC59LM814CFT-60 TC59LM806CFT-60 TC59LM806CFT-50 TC |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
4,194,304-WORDSx4 BANKSx16-BITS Network FCRAM or 8,388,608-WORDSx4BANKSx8-BITS Network FCRAM
|
Toshiba Corporation
|
| EDD2508AKTA-5B-E EDD2508AKTA-5C-E EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
Elpida Memory, Inc.
|
